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dc.contributor.authorLo, Shun-Tsungen_US
dc.contributor.authorChen, Kuang Yaoen_US
dc.contributor.authorSu, Yi-Chunen_US
dc.contributor.authorLiang, C. -T.en_US
dc.contributor.authorChang, Y. H.en_US
dc.contributor.authorKim, Gil-Hoen_US
dc.contributor.authorWu, J. -Y.en_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2014-12-08T15:06:40Z-
dc.date.available2014-12-08T15:06:40Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2010.03.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/5226-
dc.description.abstractWe have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T. (C) 2010 Elsevier Ltd All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectQuantum wellsen_US
dc.subjectSemiconductorsen_US
dc.subjectQuantum localizationen_US
dc.titleCrossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum wellen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ssc.2010.03.030en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume150en_US
dc.citation.issue25-26en_US
dc.citation.spage1104en_US
dc.citation.epage1107en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000278630200002-
dc.citation.woscount5-
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