Investigation and Effects of Wafer Bow in 3D Integration Bonding Schemes

doi:10.1007/s11664-010-1341-y

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, K. N.	en_US
dc.contributor.author	Zhu, Y.	en_US
dc.contributor.author	Wu, W. W.	en_US
dc.contributor.author	Reif, R.	en_US
dc.date.accessioned	2014-12-08T15:06:41Z	-
dc.date.available	2014-12-08T15:06:41Z	-
dc.date.issued	2010-12-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s11664-010-1341-y	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5234	-
dc.description.abstract	This paper investigates and reviews the effects of wafer bow in three- dimensional (3D) integration bonding schemes, including copper wafer bonding and oxide fusion wafer bonding with silicon on insulator (SOI)-based layer transfer technology. Wafer bow criteria for good bonding quality and fabrication techniques to minimize wafer bow are introduced for 3D integration technology and applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	Wafer bow	en_US
dc.subject	wafer bonding	en_US
dc.subject	3D integration	en_US
dc.title	Investigation and Effects of Wafer Bow in 3D Integration Bonding Schemes	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1007/s11664-010-1341-y	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	12	en_US
dc.citation.spage	2605	en_US
dc.citation.epage	2610	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000283509000015	-
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