標題: Optical fine structures of highly quantized InGaAs/GaAs self-assembled quantum dots
作者: Ramirez, H. Y.
Lin, C. H.
Chao, C. C.
Hsu, Y.
You, W. T.
Huang, S. Y.
Chen, Y. T.
Tseng, H. C.
Chang, W. H.
Lin, S. D.
Cheng, S. J.
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 30-六月-2010
摘要: A theoretical model for the electron-hole exchange interaction in three-dimensionally (3D) confining semiconductor nanostructures is presented to explain the observed decreasing tendency of the fine-structure splittings (FSSs) of small InGaAs/GaAs self-assembled quantum dots (QDs) with increasing the emission energies. The experimentally revealed FSS reduction is shown to be highly associated with the significant 3D spreading of electronic orbitals and reduced overlap of electron and hole wave functions in small and/or Ga-diffused QDs. The combination of quantum size and Ga-diffusion effects substantially reduces the averaged e-h exchange interaction and leads to the reduced FSSs in the regime of high emission energy.
URI: http://dx.doi.org/10.1103/PhysRevB.81.245324
http://hdl.handle.net/11536/5238
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.81.245324
期刊: PHYSICAL REVIEW B
Volume: 81
Issue: 24
起始頁: 0
結束頁: 0
顯示於類別:期刊論文


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