標題: | Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress |
作者: | Chen, Yu-Chun Chang, Ting-Chang Li, Hung-Wei Chen, Shih-Ching Lu, Jin Chung, Wan-Fang Tai, Ya-Hsiang Tseng, Tseung-Yuen 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | adsorption;semiconductor thin films;thin film transistors;tin compounds;zinc compounds |
公開日期: | 28-六月-2010 |
摘要: | This study investigates the effects of bias-induced oxygen adsorption on the electrical characteristic instability of zinc tin oxide thin film transistors in different ambient oxygen partial pressures. When oxygen pressure is largest, the threshold voltages showed the quickest increase but the slowest recovery during the stress phase and recovery phase, respectively. This finding corresponds to the charge trapping time constant and recovery time constant, which are extracted by fitting the stretched-exponential equation and which exhibit a relationship with oxygen pressure. We suggest that the gate bias reduces the activation energy of oxygen adsorption during gate bias stress. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457996] |
URI: | http://dx.doi.org/10.1063/1.3457996 http://hdl.handle.net/11536/5243 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3457996 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 96 |
Issue: | 26 |
結束頁: | |
顯示於類別: | 期刊論文 |