標題: | The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor |
作者: | Chung, Wan-Fang Chang, Ting-Chang Li, Hung-Wei Chen, Yu-Chun Li, Iue-Hen Tseng, Tseung-Yuen Tai, Ya-Hsiang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2011 |
摘要: | We have investigated the gate bias stress-induced instability on the electrical properties with different pre-treatments for sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The device with illuminating and heating pre-treatments under the positive/negative gate bias stress in vacuum had the smallest threshold voltage shift as the stress duration increased, while the device with oxygen gas pre-treatment exhibited an obvious variation. These electrical instabilities were ascribed to the charge trapping in the gate insulator and the oxygen/water adsorption on the active layer. It indicates that the specific pre-treatment for the a-IGZO film can improve the device stability. It also provides the important information for the subsequent passivation process concerning the pre-treatment of the active layer. |
URI: | http://hdl.handle.net/11536/20373 http://dx.doi.org/10.1149/1.3629976 |
ISBN: | 978-1-60768-260-8 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3629976 |
期刊: | STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53) |
Volume: | 41 |
Issue: | 6 |
起始頁: | 273 |
結束頁: | 281 |
顯示於類別: | 會議論文 |