完整后设资料纪录
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dc.contributor.authorHung, Sheng-Chunen_US
dc.contributor.authorNafday, Omkar A.en_US
dc.contributor.authorHaaheim, Jason R.en_US
dc.contributor.authorRen, Fanen_US
dc.contributor.authorChi, G. C.en_US
dc.contributor.authorPearton, Stephen J.en_US
dc.date.accessioned2014-12-08T15:06:43Z-
dc.date.available2014-12-08T15:06:43Z-
dc.date.issued2010-06-03en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp101505ken_US
dc.identifier.urihttp://hdl.handle.net/11536/5280-
dc.description.abstractWe report the first demonstration of sub mu m, sub-50-mu Omega.cm conductive traces directly written by Dip Pen Nanolithography (DPN). We achieved sub mu m Ag lines with 28.8 mu Omega.cm average resistivity after direct-write printing from a silver nanoparticle-based ink suspension and annealing at 150 degrees C for 10 min. This compares to Ag bulk resistivity of 1.63 mu Omega.cm, where the difference is within the range of previously reported variations in conductivity of Ag-based inks due to annealing conditions and larger width scales. We leveraged DPN's ability to directly place materials at specific locations in order to fabricate and characterize these conductive silver (Ag) traces on electrode patterns and multiple substrates (SiO(2), Kapton, mica). The low viscosity of the AgNP ink solution allowed write speeds up to 1600 mu m/s, almost 4 orders of magnitude higher than typical thiol-on-gold DPN writing speeds. This direct-write methodology paves the way for site-specific deposition of metallic materials for use in applications such as circuit repair, sensor element functionalization, failure analysis, gas sensing, and printable electronics.en_US
dc.language.isoen_USen_US
dc.titleDip Pen Nanolithography of Conductive Silver Tracesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp101505ken_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume114en_US
dc.citation.issue21en_US
dc.citation.spage9672en_US
dc.citation.epage9677en_US
dc.contributor.department光电工程学系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000278003700020-
dc.citation.woscount21-
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