Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, H. W. | en_US |
| dc.contributor.author | Huang, J. K. | en_US |
| dc.contributor.author | Lee, K. Y. | en_US |
| dc.contributor.author | Lin, C. F. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.date.accessioned | 2014-12-08T15:06:48Z | - |
| dc.date.available | 2014-12-08T15:06:48Z | - |
| dc.date.issued | 2010-06-01 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2045218 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/5333 | - |
| dc.description.abstract | GaN-based LEDs with a SiO(2) oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO(2) oxide PQC structure on an n-GaN layer. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1109/LED.2010.2045218 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 573 | en_US |
| dc.citation.epage | 575 | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| Appears in Collections: | Articles | |
- Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth / Huang, H. W.;Lee, K. Y.;Huang, J. K.;Lin, C. H.;Lin, C. F.
- Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth / Huang, H. W.;Huang, J. K.;Lee, K. Y.;Lin, C. F.;Kuo, H. C.
- Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface / Huang, H. W.;Lai, F. I.;Huang, J. K.;Lin, C. H.;Lee, K. Y.
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