標題: Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface
作者: Huang, H. W.
Lai, F. I.
Huang, J. K.
Lin, C. H.
Lee, K. Y.
Lin, C. F.
Yu, C. C.
Kuo, H. C.
光電工程學系
Department of Photonics
公開日期: 1-Jun-2010
摘要: GaN (gallium nitride)-based light-emitting diodes (LEDs) with a nano-scale SiO(2) structure between a transparent indium-tin oxide (ITO) layer and p-GaN were fabricated. The forward voltage at 20 mA for a GaN-based LED with a SiO(2) nano-scale structure was slightly higher than that of a conventional GaN-based LED because the total area of the p-type metal contact between the transparent ITO layer and p-GaN was smaller. However, the light output power for the GaN-based LED with a nano-scale structured SiO(2) at 20 mA was 24% higher than that for a conventional GaN-based LED structure. This increase in the light output power is mostly attributed to the scattering of light from the SiO(2) photonic quasi-crystal (PQC) layer.
URI: http://dx.doi.org/10.1088/0268-1242/25/6/065007
http://hdl.handle.net/11536/5341
ISSN: 0268-1242
DOI: 10.1088/0268-1242/25/6/065007
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 25
Issue: 6
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