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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorChen, Guo-Juen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:06:50Z-
dc.date.available2014-12-08T15:06:50Z-
dc.date.issued2010-06-01en_US
dc.identifier.issn1359-0286en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.cossms.2009.11.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/5359-
dc.description.abstractPressure-induced plastic deformation and phase transformations manifested as the discontinuities displayed in the loading and unloading segments of the load-displacement curves were investigated by performing the cyclic nanoindentation tests on the (1 1 0)-oriented Si single-crystal with a Berkovich diamond indenter. The resultant phases after indentation were examined by using the cross-sectional transmission electron microscopy (XTEM) technique. The behaviors of the discontinuities displayed on the loading and re-loading segments of the load-displacement curves are found to closely correlate to the formation of Si-II metallic phase, while those exhibiting on the unloading segments are relating to the formation of metastable phases of Si-XII, and amorphous silicon as identified by TEM selected area diffraction (SAD) analyses. Results revealed that the primary indentation-induced deformation mechanism in Si is intimately depending on the detailed stress distributions, especially the reversible Si-II <-> Si-XII/Si-III phase transformations might have further complicated the resultant phase distribution. In addition to the frequently observed stress-induced phase transformations and/or crack formations, evidence of dislocation slip bands was also observed in tests of Berkovich nanoindentation. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSi(110)en_US
dc.subjectNanoindentationen_US
dc.subjectFocused ion beamen_US
dc.subjectCross-sectional transmission electron microscopyen_US
dc.titleNanoindentation-induced phase transformation in (110)-oriented Si single-crystalsen_US
dc.typeReviewen_US
dc.identifier.doi10.1016/j.cossms.2009.11.002en_US
dc.identifier.journalCURRENT OPINION IN SOLID STATE & MATERIALS SCIENCEen_US
dc.citation.volume14en_US
dc.citation.issue3-4en_US
dc.citation.spage69en_US
dc.citation.epage74en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000281049600003-
dc.citation.woscount30-
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