標題: | Nanoindentation-induced phase transformation in (110)-oriented Si single-crystals |
作者: | Jian, Sheng-Rui Chen, Guo-Ju Juang, Jenh-Yih 電子物理學系 Department of Electrophysics |
關鍵字: | Si(110);Nanoindentation;Focused ion beam;Cross-sectional transmission electron microscopy |
公開日期: | 1-六月-2010 |
摘要: | Pressure-induced plastic deformation and phase transformations manifested as the discontinuities displayed in the loading and unloading segments of the load-displacement curves were investigated by performing the cyclic nanoindentation tests on the (1 1 0)-oriented Si single-crystal with a Berkovich diamond indenter. The resultant phases after indentation were examined by using the cross-sectional transmission electron microscopy (XTEM) technique. The behaviors of the discontinuities displayed on the loading and re-loading segments of the load-displacement curves are found to closely correlate to the formation of Si-II metallic phase, while those exhibiting on the unloading segments are relating to the formation of metastable phases of Si-XII, and amorphous silicon as identified by TEM selected area diffraction (SAD) analyses. Results revealed that the primary indentation-induced deformation mechanism in Si is intimately depending on the detailed stress distributions, especially the reversible Si-II <-> Si-XII/Si-III phase transformations might have further complicated the resultant phase distribution. In addition to the frequently observed stress-induced phase transformations and/or crack formations, evidence of dislocation slip bands was also observed in tests of Berkovich nanoindentation. (C) 2009 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.cossms.2009.11.002 http://hdl.handle.net/11536/5359 |
ISSN: | 1359-0286 |
DOI: | 10.1016/j.cossms.2009.11.002 |
期刊: | CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE |
Volume: | 14 |
Issue: | 3-4 |
起始頁: | 69 |
結束頁: | 74 |
顯示於類別: | 期刊論文 |