標題: Nanoindentation-induced phase transformation in (110)-oriented Si single-crystals
作者: Jian, Sheng-Rui
Chen, Guo-Ju
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: Si(110);Nanoindentation;Focused ion beam;Cross-sectional transmission electron microscopy
公開日期: 1-六月-2010
摘要: Pressure-induced plastic deformation and phase transformations manifested as the discontinuities displayed in the loading and unloading segments of the load-displacement curves were investigated by performing the cyclic nanoindentation tests on the (1 1 0)-oriented Si single-crystal with a Berkovich diamond indenter. The resultant phases after indentation were examined by using the cross-sectional transmission electron microscopy (XTEM) technique. The behaviors of the discontinuities displayed on the loading and re-loading segments of the load-displacement curves are found to closely correlate to the formation of Si-II metallic phase, while those exhibiting on the unloading segments are relating to the formation of metastable phases of Si-XII, and amorphous silicon as identified by TEM selected area diffraction (SAD) analyses. Results revealed that the primary indentation-induced deformation mechanism in Si is intimately depending on the detailed stress distributions, especially the reversible Si-II <-> Si-XII/Si-III phase transformations might have further complicated the resultant phase distribution. In addition to the frequently observed stress-induced phase transformations and/or crack formations, evidence of dislocation slip bands was also observed in tests of Berkovich nanoindentation. (C) 2009 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.cossms.2009.11.002
http://hdl.handle.net/11536/5359
ISSN: 1359-0286
DOI: 10.1016/j.cossms.2009.11.002
期刊: CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
Volume: 14
Issue: 3-4
起始頁: 69
結束頁: 74
顯示於類別:期刊論文


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