Vertically Coupled Quantum-Dot Infrared Photodetectors

doi:10.1109/LPT.2010.2046030

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lo, Ming-Cheng	en_US
dc.contributor.author	Wang, Shiang-Yu	en_US
dc.contributor.author	Ling, Hong-Shi	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.date.accessioned	2014-12-08T15:06:53Z	-
dc.date.available	2014-12-08T15:06:53Z	-
dc.date.issued	2010-06-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2010.2046030	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5381	-
dc.description.abstract	Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.	en_US
dc.language.iso	en_US	en_US
dc.subject	Infrared detectors	en_US
dc.subject	photodetectors	en_US
dc.subject	quantum dots (QDs)	en_US
dc.subject	quantum effect semiconductor devices	en_US
dc.title	Vertically Coupled Quantum-Dot Infrared Photodetectors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2010.2046030	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	11	en_US
dc.citation.spage	796	en_US
dc.citation.epage	798	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000277664900002	-
dc.citation.woscount	2	-
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