InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

Abstract

InGaN-based light-emitting diodes (LEDs) were grown and fabricated on nanoscale patterned Si (111) substrates (NPSi). Using anodized aluminum oxide as the etch mask, the NPSi was prepared with an average nanopore diameter of 150 nm and interpore distance of 120 nm. LEDs grown on NPSi exhibit relaxed tensile stress relative to the ones grown on microscale patterned Si (111) substrates (MPSi). Nanoheteroepitaxial lateral overgrowth was significantly promoted on NPSi, which led to extensive dislocation bending and annihilation. The devices made on NPSi exhibit lower leakage current and higher light output power as compared with those on MPSi. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3427438]