标题: | 藉由光致变化效应研究矽酸铋晶体的杂质能阶及其对光折变效应的影响 Studying on the impurity levels of Bi12SiO20 crystals and the effect of photorefractive effect by measuring photochromic effect |
作者: | 杨谨纲 Chin Kang Yang 许根玉 林烜辉 Ken Yuh Hsu Shiuan Huei Lin 光电工程学系 |
关键字: | 晶体;光折变效应;能阶结构;光致色变效应;crystal;photorefractive effect;band structure;photochromatic effect |
公开日期: | 2003 |
摘要: | 本论文将研究钌、钴、锇等元素的掺杂及钴和铝元素共同掺杂对矽酸铋(Bi12SiO20)晶体的光折变效应之影响。基于实际的应用考量,我们希望光折变晶体能在较便宜的半导体雷射波长范围内作记录,目前同属于硫化物结构的钛酸铋晶体(Bi12TiO20)已能在长波长790nm下记录光栅,但是因为钛酸铋晶体的长晶技术无法做大体积的块材,因此大大地限制了其应用,因此我们希望能做成大体积块材的矽酸铋晶体也能在近红外光区亦能记录光栅,为此,我们选择了几种元素作为掺杂,希望能够将矽酸铋晶体的感光波长往长波长方向移动,我们将藉由一系列量测来跟能阶结构的理论相对照,并探讨绕射效率对时间的变化关系,来了解这几种元素的掺杂对于矽酸铋晶体内光折变效应所产生的影响。 In this thesis, we investigate the influence of Ru, Co, Os, Co+Al doping on Bi12SiO20 crystals . Because the semiconductor laser is cheaper than other lasers, We hope we can use this laser to do record. Now the Bi12TiO20 crystals can use wavelength 790nm to do record but it is very hard to increase the volume, this reason limits it’s application. However, Bi12SiO20 crystals don’t have this limit, we want to use them to do record at long wavelength. In order to let them be more sensitive at long wavelength we dope some elements in these crystals. Then we use a series of methods to find their impurity levels and measure the change of diffraction efficiency by time. By this way we can understand the effect of these dopants in Bi12SiO20 crystals. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009124557 http://hdl.handle.net/11536/54434 |
显示于类别: | Thesis |
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