標題: Operation of a Novel Device With Suspended Nanowire Channels
作者: Lin, Horng-Chih
Kuo, Chia-Hao
Li, Guan-Jang
Su, Chun-Jung
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hysteresis;MOSFET;nanowire (NW);poly-Si
公開日期: 1-May-2010
摘要: We investigate the operation of a new device featuring a side-gate scheme and suspended poly-Si nanowire (NW) channels. The fabrication adopted a sidewall-spacer-etching technique to form the poly-Si NW channels. The NW channels were further suspended using a simple wet-etching step. An interesting hysteresis phenomenon is observed in the I-V characteristics. In addition, a steep subthreshold swing (< 60 mV/dec) is also observed in the transfer curves. A scenario is proposed to explain the operation of such a device.
URI: http://dx.doi.org/10.1109/LED.2010.2041744
http://hdl.handle.net/11536/5450
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2041744
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 5
起始頁: 384
結束頁: 386
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