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dc.contributor.author蘇仁鴻en_US
dc.contributor.authorJen Hung Suen_US
dc.contributor.author林木獅en_US
dc.contributor.authorMu Shin Linen_US
dc.date.accessioned2014-12-12T02:07:42Z-
dc.date.available2014-12-12T02:07:42Z-
dc.date.issued2003en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009125538en_US
dc.identifier.urihttp://hdl.handle.net/11536/54968-
dc.description.abstract本實驗合成並鑑定含矽氧烷亞醯胺的雙鍵單體(N1)、POSS接雙鍵(POSS-D)及POSS接nadic anhydride(POSS-A)。而後分為兩組系統,其中一組將單體N1與POSS-D進行加成聚合反應,以成為多面體倍半矽氧烷寡聚物/聚亞醯胺奈米複合材料;另一組為POSS-A與商用環氧樹脂ERL-4221進行開環酯化聚合反應。以製備具交聯環氧樹脂含反應基的多面體倍半矽氧烷寡聚物。在不同的配方比例下得到七組交聯產物。鑑定分析後以FT-IR研究其交聯行為,以DSC、TGA、TMA分析其熱性質,並測量凝膠分率與介電常數。實驗結果顯示隨著POSS含量增加,對熱穩定性有所提升且能有效降低介電常數,並保有高的玻璃轉移溫度。zh_TW
dc.description.abstractThree starting materials were synthesized : siloxane-contaning imide with difunctional double bonds (N1), polyhedral oligomeric silsesquioxane (POSS) with monofunctional double bond (POSS-D), and POSS with nadic anhydride (POSS-A). One crosslinked material obtained by the reaction of N1 with POSS-D was compared with another material, which was prepared by the reaction of commercial epoxy ERL-4221 with POSS-A. FTIR was employed to monitor the curing reactions. Thermal characters of materials were performed with DSC, TGA, and TMA. Gel fractions were measured by continuous Soxhlet extraction. While dielectric constants were measured with DEA Du Pont 2970 dielectric analyzer at 1 MHz. Experimental results shows that by increasing POSS content an increase of thermal stability as well as glass transition, and a decrease dielectric constant of materials were generally observed in this study.en_US
dc.language.isozh_TWen_US
dc.subject聚亞醯胺zh_TW
dc.subject矽氧烷zh_TW
dc.subject介電常數zh_TW
dc.subjectPOSSen_US
dc.title多面體倍半矽氧烷寡聚物(POSS)/含矽氧烷聚亞醯胺與環氧樹脂之奈米複合材料之特性研究zh_TW
dc.titleStudy on Polyhedral Oligomeric Silsesquioxane (POSS)/ Siloxane-Contaning Polyimide and Epoxy Nanocompositesen_US
dc.typeThesisen_US
dc.contributor.department應用化學系碩博士班zh_TW
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