Comparative study between conventional and diffusion-bonded Nd-doped vanadate crystals in the passively mode-locked operation

doi:10.1364/OE.18.009518

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Y. J.	en_US
dc.contributor.author	Huang, Y. P.	en_US
dc.contributor.author	Liang, H. C.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:07:02Z	-
dc.date.available	2014-12-08T15:07:02Z	-
dc.date.issued	2010-04-26	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.18.009518	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5505	-
dc.description.abstract	We design a reliable linear three-element cavity to make a comparative study between the conventional and diffusion-bonded Nd:GdVO(4) crystals in the passively mode-locked operation. Experimental investigations reveal that the mode-locked pulse width obtained with the diffusion-bonded crystal is considerably broader than that obtained with the conventional crystal, even though the diffusion-bonded crystal can significantly reduce the thermal effects. The pulse broadening is experimentally verified to come from the length of the undoped part that brings in a reduction of the spatial-hole-burning (SHB) effect. (C) 2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Comparative study between conventional and diffusion-bonded Nd-doped vanadate crystals in the passively mode-locked operation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.18.009518	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	18	en_US
dc.citation.issue	9	en_US
dc.citation.spage	9518	en_US
dc.citation.epage	9524	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000277082200082	-
dc.citation.woscount	6	-
顯示於類別：	期刊論文

文件中的檔案：

000277082200082.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。