完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ku, Ching-Shun | en_US |
dc.contributor.author | Lee, Hsin-Yi | en_US |
dc.contributor.author | Huang, Jheng-Ming | en_US |
dc.contributor.author | Lin, Chih-Ming | en_US |
dc.date.accessioned | 2014-12-08T15:07:08Z | - |
dc.date.available | 2014-12-08T15:07:08Z | - |
dc.date.issued | 2010-04-01 | en_US |
dc.identifier.issn | 1528-7483 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/cg9013043 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5597 | - |
dc.description.abstract | Nonpolar ZnO films were grown epitaxially on (10 (1) over bar0) sapphire substrates at 200 degrees C by atomic layer deposition with interrupted flow. The latter method improved the crystalline quality of ZnO films, transformed the structure from polycrystalline to epitaxial, and enhanced the optical properties of near-band-edge emission. The interfacial structure shows multiple domain phases along sapphire (020) and the disappearance of a minor phase near the surface. As determined by X-ray diffraction, the epitaxial relation between ZnO and sapphire follows [002](ZnO)vertical bar vertical bar[020](sapphire) and [020](ZnO)vertical bar vertical bar[006](sapphire). The photoluminescence intensity increased with increasing crystalline quality and thickness of ZnO films. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Epitaxial Growth of m-Plane ZnO Thin Films on (10(1)over-bar0) Sapphire Substrate by Atomic Layer Deposition with Interrupted Flow | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/cg9013043 | en_US |
dc.identifier.journal | CRYSTAL GROWTH & DESIGN | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1460 | en_US |
dc.citation.epage | 1463 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000276234500003 | - |
dc.citation.woscount | 19 | - |
顯示於類別: | 期刊論文 |