標題: Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
作者: Lin, Shih-Yen
Tseng, Chi-Che
Lin, Wei-Hsun
Mai, Shu-Cheng
Wu, Shung-Yi
Chen, Shu-Han
Chyi, Jen-Inn
光電工程學系
Department of Photonics
關鍵字: electroluminescence;gallium arsenide;gallium compounds;III-V semiconductors;light emitting diodes;photoluminescence;semiconductor heterojunctions;semiconductor quantum dots;spectral line shift
公開日期: 22-Mar-2010
摘要: A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.
URI: http://dx.doi.org/10.1063/1.3371803
http://hdl.handle.net/11536/5627
ISSN: 0003-6951
DOI: 10.1063/1.3371803
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 12
結束頁: 
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