| 标题: | QUASI-STATIC ANALYSIS OF X-BAND DOUBLE-DRIFT LO-HI-LO SILICON IMPATT DIODES |
| 作者: | CHANG, MC CHEN, MC 交大名义发表 电子工程学系及电子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
| 公开日期: | 1978 |
| URI: | http://hdl.handle.net/11536/5637 |
| ISSN: | 0020-7217 |
| 期刊: | INTERNATIONAL JOURNAL OF ELECTRONICS |
| Volume: | 45 |
| Issue: | 1 |
| 起始页: | 37 |
| 结束页: | 48 |
| 显示于类别： | Articles |
- X频带双飘移高低高矽冲渡二极体之准静态设计规范 / 张懋中;陈茂杰;Mau-Chung Chang;Mao-Chieh Chen
- 空乏区宽度之调变效应对高低高双飘带冲度二极体之影响 / 张懋中;陈茂杰;M.C.Chang;M.C.Chen
- LARGE-SIGNAL ANALYSIS OF LO-HI-LO DOUBLE-DRIFT SILICON IMPATT DIODES AT 50 GHZ / CHANG, LC;HU, DH
- DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY DOUBLE-DRIFT SILICON IMPATT DIODES / CHANG, LC;HU, DH;WANG, CC
- SHIFTING OF PEAK GENERATION RATE IN DOUBLE-DRIFT SILICON IMPATT DIODES / CHANG, L;SU, S
- Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate / Meng, CC
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