SHIFTING OF PEAK GENERATION RATE IN DOUBLE-DRIFT SILICON IMPATT DIODES

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHANG, L	en_US
dc.contributor.author	SU, S	en_US
dc.date.accessioned	2014-12-08T15:07:12Z	-
dc.date.available	2014-12-08T15:07:12Z	-
dc.date.issued	1977	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5648	-
dc.language.iso	en_US	en_US
dc.title	SHIFTING OF PEAK GENERATION RATE IN DOUBLE-DRIFT SILICON IMPATT DIODES	en_US
dc.type	Letter	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	24	en_US
dc.citation.issue	3	en_US
dc.citation.spage	283	en_US
dc.citation.epage	284	en_US
dc.contributor.department	工學院	zh_TW
dc.contributor.department	College of Engineering	en_US
dc.identifier.wosnumber	WOS:A1977CZ90700020	-
dc.citation.woscount	1	-
Appears in Collections:	Articles

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