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DC FieldValueLanguage
dc.contributor.authorCHANG, LCen_US
dc.contributor.authorHU, DHen_US
dc.contributor.authorWANG, CCen_US
dc.date.accessioned2014-12-08T15:07:12Z-
dc.date.available2014-12-08T15:07:12Z-
dc.date.issued1977en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/11536/5659-
dc.language.isoen_USen_US
dc.titleDESIGN CONSIDERATIONS OF HIGH-EFFICIENCY DOUBLE-DRIFT SILICON IMPATT DIODESen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume24en_US
dc.citation.issue6en_US
dc.citation.spage655en_US
dc.citation.epage657en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:A1977DL02700004-
dc.citation.woscount9-
Appears in Collections:Articles


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