完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChung, Yung-Huien_US
dc.contributor.authorWu, Jieh-Tsorngen_US
dc.date.accessioned2014-12-08T15:07:13Z-
dc.date.available2014-12-08T15:07:13Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2010.2063590en_US
dc.identifier.urihttp://hdl.handle.net/11536/5679-
dc.description.abstractA 10-bit 100-MS/s two-step ADC was fabricated using a 90 nm CMOS technology. To reduce power consumption, the ADC uses latch-type comparators for signal digitalization and an open-loop amplifier for residue amplification. The accuracy of the comparators is improved by offset calibration. The gain accuracy and the linearity of the residue amplifier are enhanced by digital background calibration. The ADC consumes 6 mW from a 1 V supply. Measured SNR and SFDR are 58.2 dB and 75 dB respectively. Measured ENOB is 9.34 bits. The FOM is 100 fJ . V per conversion-step.en_US
dc.language.isoen_USen_US
dc.subjectAnalog-digital conversionen_US
dc.subjectcalibrationen_US
dc.subjectcomparators (circuits)en_US
dc.subjectsubranging ADCen_US
dc.subjecttwo-step ADCen_US
dc.titleA CMOS 6-mW 10-bit 100-MS/s Two-Step ADCen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/JSSC.2010.2063590en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume45en_US
dc.citation.issue11en_US
dc.citation.spage2217en_US
dc.citation.epage2226en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000283442500002-
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