以反應性交流磁控濺鍍系統成長碳化鈦薄膜之研究

Abstract

本實驗使用自製之單靶二極式交流磁控濺鍍系統, 以一寸的鈦為鍍靶, 在 氬氣和甲烷的混合輝光放電氣氛下教流濺鍍鈦並和甲烷反應而後附著於溫 度被控制在300到500讈的Asp-23高速鋼基板上．薄膜的附著速率,成份, X 光繞射頻譜, 縱身分布,橫截面和表面微結構等分析都是以甲烷分壓範圍 在0.25x10到0.98x10Torr的濺鍍氣氛下所成長出的碳化鈦薄膜為樣品所分 析出的 由附著速率和成份分析所得結果得知薄膜上的成份和鈀上是不是 形成碳化鈦化合物有密切關係 於低的甲烷分壓(< 0.36mT)時整個系統等 於單純只對鈦靶作濺鍍; 當分壓大於0.36mT時, 在靶上因反應形成的化合 物決定所成長薄膜的成份 在縱身測量方面可看出碳在界面的穿透深度不 及鈦, 而於X 光的繞射頻譜了解到(200) 在薄膜中是主要的相由整個實驗 結果可看出甲烷和氬氣的分壓比是一個非常重要的參數 The experiments were performed in a diode magnetron r.f. sputtering unit. The deposition rate, composition, diffraction spectra, depth profile, cross section and surface microstructure of the TiC thin films, obtained by sputtering in CH4 pressure range from 0.25 * 10-3 to 0.98 * 10-3 Torr, have been measured. The results of deposition rate and composition measurements show that the amount of reactive constituents incorporated into the growing films depends on whether a TiC compound has been formed on the surface of the target. At low CH4 partial pressure (<0.36 mT) the system operated under conditions such that pure Ti was sputtered. At CH4 partial pressure higher than 0.36mT species originating from the target determine the composition of the coatings. The result of depth profile measurement show that the depth of C penetration into the interfacial region is less than that of Ti , and the study of diffraction spectra of the flms show that the films are single TiC phase at PCH4 = 0.87 to 0.91 mT. The important process parameter was found to be the partial pressure ratio of reactive gases CH4 to the sputtering gases Ar.