鋯鈦酸鉛鐵電陶瓷的幅射效應

Abstract

鋯鈦酸鉛陶瓷經過γ射線(能量≒1.17MeV，劑量累積到1.12*10E9 rad)及 中子照射(能量≧0.025eV，劑量累積到10E21 n/㎡，然後研究經過幅射照 射之後對鋯鈦酸鉛電性的影響。鋯鈦酸鉛經過中子照射後造成在居禮點的 介電常數峰值明顯降低，而且電阻係數增加。這些效應可以歸因於移位缺 陷的產生。 PZT ceramics were exposed to γ-irradiation (energy ≒1.17MeV， oses up to 1.12*10E9rad) and neutron irradiation (energy≧0.025 ，doses up to 10E17 n/c㎡)，and the effects of this radiation onhe electrical properties of the PZT ceramics were investigated. A clear depression of dielectric-constant peak near the Curie point and an increase in resistivity were observed in PZT cermics after neutron irradiation up to 10E17 n/ c㎡. These effects can be attributed to the generation of displacement defects.