| 標題: | FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION |
| 作者: | CHANG, CY CHIU, PL MA, CH 工學院 College of Engineering |
| 公開日期: | 1-一月-1973 |
| 摘要: | |
| URI: | http://hdl.handle.net/11536/5697 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 16 |
| Issue: | 5 |
| 起始頁: | 646 |
| 結束頁: | 648 |
| 顯示於類別： | 期刊論文 |
- The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector / Horng, GJ;Chang, CY;Ho, C;Lee, CY;Huang, TY
- 磷化銦蕭基二極體之製備與特性量測 / 許仲延;Xu, Zhong-Yan;楊賜麟;Yang, Si-Lin
- A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS / LOU, YS;WU, CY
- Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the schottky contacts on AlGaN/GaN heterostructures / Lu, Chung-Yu;Chang, Edward Yi;Huang, Jui-Chien;Chang, Chia-Ta;Lin, Mei-Hsuan
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