標題: 鈀矽化淺接面之研究
Study of Pd-Silicided Shallow Junctions
作者: 周培芬
Pei-Fen Chou
鄭晃忠
Huang-Chung Cheng
應用化學系碩博士班
關鍵字: 離子植入金屬, 離子植入金屬矽化物, 金屬矽化物, 淺接面;ITM(Implant Through Metal);ITS(Implant Through ide;Shallow Junction
公開日期: 1992
摘要: 本研究藉著BF2+及P+離子植入金屬及金屬矽化物,再經後續退火形成 Pd2
Si/p+n及Pd2Si/n+p的淺接面。離子佈植條件為,固定佈植劑量為 5E15
cm-2,改變佈植能量。我們發現離子佈植的能量為一影響二極體品質的重
要變因。在本實驗中我們藉BF2+離子植入Pd金屬的方法,植入條件為
100KeV-5E15cm-2,經600.degree.C退火,製做出逆向電流為1nA/cm2接面
深度為0.08.mu.m的p+n二極體。另外,我們發現,將BF2+及P+離子植入Pd
金屬或金屬矽化物可以提高Pd矽化物的高溫穩定性,P+離子植入之Pd金屬
矽化物比BF2+離子植入的金屬矽化物可以有較大晶粒,且在高溫退火時有
明顯的晶粒成長。在本實驗中,將探討Pd金屬矽化物之高溫穩定及p-n接
面漏電流之機構。
Shallow p-n junctions have been fabricated by implanting BF
//2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM)
and subsequently annealing at various temperatures in N//2
ambient. The implantation conditions are selected that the
dosage is fixed at 5E15 cm**-2 and the implant energy is
changed. In this experiment, the implant energy is the key role
to obtain a low-leakage diode. The optimun condition of p+n
diodes can be achieved by ITM method with BF//2+ implantaion at
100 KeV to 5E15 cm**-2 and anneald at 600.degree.. The reverse
current is 1 nA/cm**2 at -5 V. The junction depth measured by
spread resistance is 0.08 .mu.m. After comparing the effects
of the implantation and non-implantation, the implantation of
BF//2+ ions and P+ ions into thin Pd layer can stabilize the Pd
silicide film and prevent it from forming the islands during
high temperature annealings. The grain sizes of P+-implanted
silicide films are relatively larger than those of BF//2+
-implanted silicide film for different annealing temperatures.
High-temperature stability of the palladium silicide films and
the leakage-current mechanism are discussed in this study.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT810500020
http://hdl.handle.net/11536/57073
Appears in Collections:Thesis