Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory

doi:10.1109/LED.2009.2038177

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Po-Chun	en_US
dc.contributor.author	Chen, Lu-An	en_US
dc.contributor.author	Sheu, Jeng-Tzong	en_US
dc.date.accessioned	2014-12-08T15:07:20Z	-
dc.date.available	2014-12-08T15:07:20Z	-
dc.date.issued	2010-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2009.2038177	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5777	-
dc.description.abstract	A high-performance gate-all-around (GAA) poly-Si nanowire (NW) SONOS-type memory thin-film transistor (TFT) is presented. The presence of the corners of the GAA structure resulted in the program speed and memory window of this device being superior to those of a planar poly-Si TFT device. When erasing, planar devices exhibit a threshold-voltage shift resulting from gate injection; the GAA device was immune to this behavior. The presence of a nonuniform electric field in the channel region during programming and erasing was confirmed through simulation. The device also exhibited superior endurance and data-retention behavior.	en_US
dc.language.iso	en_US	en_US
dc.subject	Field enhancement	en_US
dc.subject	gate-all-around (GAA)	en_US
dc.subject	gate injection	en_US
dc.subject	nanowire (NW)	en_US
dc.subject	SONOS	en_US
dc.subject	thin-film transistor (TFT)	en_US
dc.title	Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2009.2038177	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	3	en_US
dc.citation.spage	216	en_US
dc.citation.epage	218	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	材料科學與工程學系奈米科技碩博班	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Graduate Program of Nanotechnology , Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000274995300013	-
dc.citation.woscount	19	-
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