BF2表面反攙雜植入對N型金氧半場效電晶體之效應研究

Abstract

擁有各種不同BF2植入之深次微米表面反攙雜LDD(SCD_LDD)N型金氧半場效 電晶體的可靠度和特性被研究探討.實驗資料顯示:跟用大角度傾斜佈植汲 極(LATID)元件比較下,SCD_LDD元件具備更優越的熱載子可靠度與相當的 互補式金氧半場效電晶體環狀振盪器延遲時間.在SCD_LDD元件中,閘極感 應汲極漏電(GIDL)電流可被BF2相反攙雜植入所改進.較小的BF2佈植角度 及適切劑量被用來達成增進之熱載子生命期跟特性.相異的BF2表面反攙雜 植入提供了一個新的自由度去設計LDD區域之攙雜分布而無可察覺的顯著 破損.因此,SCD_LDD元件適合作為高特性和高可靠度的深次微米元件應用. The reliability and performance of deep-submicron surface counterdoped LDD (SCD_LDD) NMOSFET's with various BF2 implants were investigated. Experimental data show that SCD_LDD devices have superior hot-carrier reliability and analogous CMOS ring oscillator delay time compared to large-angle-tilt implanted drain (LATID) devices. The gate-induced drain leakage (GIDL) current can be improved in SCD_LDD devices by counter-doping of BF2 implant. Smaller BF2 implant angle and appropriate implant dose are suggested to achieve enhanced hot-carrier lifetime and performance. No significant damages could be observed for different BF2 surface counterdoped implants providing a new freedom to design doping profiles in the LDD region. Therefore, the SCD_LDD device is suitable for high performance and high reliability deep-submicron device applications.