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完整后设资料纪录
DC 栏位值语言
dc.contributor.author吕照全en_US
dc.contributor.authorJaw-Chyung Leuen_US
dc.contributor.author曾俊元en_US
dc.contributor.authorTseung-Yuen Tsengen_US
dc.date.accessioned2014-12-12T02:12:12Z-
dc.date.available2014-12-12T02:12:12Z-
dc.date.issued1993en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT820430064en_US
dc.identifier.urihttp://hdl.handle.net/11536/58065-
dc.description.abstract本论文以溶胶-凝胶法成功地制备出不同镧浓度(0~28 mol%)结果的PLT 铁
电薄膜,以Pt/Ti/Si为基板,经600?C烧结30分钟,结果可得到无龟裂 且晶
粒大小均匀(约100nm)且表面平坦的PLT薄膜.本实验所制备的PLT0,
PLT10,PLT28和PLT28薄膜,其介电系数分别为 198,256,370,和588,关于
PLT铁电薄膜的主要传导机构,本文亦加以探讨.利用传统积体电路制程,以
PLT0,PLT10,PLT20和PLT28为材料所制备 出的PLT薄膜电容,其电荷储存密
度分别为0.35,0.46, 0.66和1.03uC/cm2 -V.
The La-modified lead titanate(PLT) with various lanthanum
contents(0~28mol%)has been prepared by sol-gel processing. The
PLT thin films deposited on Pt/Ti/Si substrate at 600?C for 30
min. possess crackinng-free, uniform grain size(about 100nm),
and flat surface properties. The dielectric constants of the
PLT thin films are 198, 256, 370, and 588 for PLT0, PLT10,
PLT20, and PLT28, respectively. The dominant conductance
mechanism of the PLT thin film has also been discussed. The
conventional integrated-circuit processing has been applied to
fabricated the PLT thin film capacitors. The charge storage
densities of PLT thin film capacitors are 0.35, 0.46, 0.66, and
1.03uC/cm2-V for PLT0, PLT10, PLT20, and PLT28, respectively.		zh_TW
dc.language.isoen_USen_US
dc.subject溶胶-凝胶法;铁电薄膜。zh_TW
dc.subjectSol-Gel;Ferroelectric thin film;en_US
dc.title以溶胶-凝胶法制备PLT铁电薄膜及其电性之研究zh_TW
dc.titlePreparation and Electrical Properties of PLT Ferroelectric Thin Film by Sol-Gel Processingen_US
dc.typeThesisen_US
dc.contributor.department电子研究所zh_TW
显示于类别：Thesis


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