實驗性次臨界互補式金氧半電路

Abstract

在本篇論文裡，我們以探討研究金氧半電晶體次臨界電流的模型及其相關 應用電路，並以晶片實作將其加以實現．由於晶片上的元件越來越多，所 消耗的功率也就越來越大，尤其對類比電路而言，將元件操作次臨界電流 區是降低消耗功率的一個好方法．除此之外，次臨界金氧半電晶體可提供 了在低電壓電源下大的操作範圍．一種新式操作於次臨界區域之運算電導 放大器電路以被實現，比較傳統型式後發現其在動作範圍內特性有大幅改 進．另外在積體電路中，若所需要的電阻值在百萬歐姆數量級以上，利用 目前互補式金氧半製程很不實際，因此可利用主動電阻電路操作在次臨界 區域的方式來完成．還有隨絕對溫度正比之輸出電壓電路與電流源等電路 在次臨界電流區的工作特性已加以晶片實現並研究分析，藉此做為在此領 域之次臨界互補式金氧半積體電路的基礎． @ The thesis investigates experimentally the subthreshold region of operation of the MOS transistor and its associated circuit applications. We also introduce a new model suitable for computer simulation of subthreshold CMOS VLSI systems. Operating the devices in the subthreshold region is a good method to reduce the power dissipation.In addition, it can offer a large dynamic range for circuit application even at the low power supply voltage utilized. A new operational tranconductance amplifier( OTA ) operating in the subthreshold region has been implemented on chip, which has shown improved dynamic characters as compared to the conventional OTA. In the integrated circuits where the resistive value required is about the order of megaohm, which is impractical to implement in the present CMOS process technology, an active resistor circuit operating in the subthreshold regime has been implemented to overcome this difficulty. The other circuits such as proportional-to-absolute temperature( PTAT ) and current mirror, each operating in subthreshold region are also implemented and studied. The work of the thesis has established the basis for realized the subthreshold CMOS analog and digital systems.