标题: | Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template |
作者: | Kuo, C. H. Chang, L. C. Kuo, C. W. Chi, G. C. 光电工程学系 Department of Photonics |
关键字: | InGaN-GaN;light-emitting diode (LED);nano;template |
公开日期: | 15-二月-2010 |
摘要: | We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED. |
URI: | http://dx.doi.org/10.1109/LPT.2009.2038595 http://hdl.handle.net/11536/5837 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2009.2038595 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 22 |
Issue: | 4 |
起始页: | 257 |
结束页: | 259 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.