標題: | Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel |
作者: | Lin, Zer-Ming Lin, Horng-Chih Chen, Wei-Chen Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | elemental semiconductors;semiconductor thin films;silicon;thermionic emission;thin film transistors |
公開日期: | 15-二月-2010 |
摘要: | In this letter, characteristics of independently-controllable double-gated polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with ultrathin channel are characterized and analyzed experimentally and theoretically. As compared with the single-gated mode where only one of the gates is used for driving the device, 1.3-2.1 fold increase in drive current is achieved under double-gated mode as the two gates are biased simultaneously for driving the device. A remarkable lowering of barrier height 7-12 meV in the latter case due to the coupling of the two gate biases is identified as the major origin for such performance enhancement. |
URI: | http://dx.doi.org/10.1063/1.3327336 http://hdl.handle.net/11536/5839 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3327336 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 96 |
Issue: | 7 |
結束頁: | |
顯示於類別: | 期刊論文 |