| 標題: | 次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測 Physics, simulation and characterization of hot carrier injection induced reliability issues in submicron MOSFET's |
| 作者: | 黃智睦 Huang, Zhi Mu 汪大暉 Wang, Da Hui 電子研究所 |
| 公開日期: | 1993 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT822430015 http://hdl.handle.net/11536/58528 |
| 顯示於類別： | 畢業論文 |
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- A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET's / Chung, SS;Yang, JJ
- EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS / WANG, TH;HUANG, CM;CHOU, PC;CHUNG, SSS;CHANG, TE
- 深次微米元件中熱載子效應所引發之氧化層可靠度 / 蔣汝平;Lu-Ping Chiang;汪大暉;Tahui Wang
- A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions / Cheng, SM;Yih, CM;Yeh, JC;Kuo, SN;Chung, SS
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