次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	黃智睦	en_US
dc.contributor.author	Huang, Zhi Mu	en_US
dc.contributor.author	汪大暉	en_US
dc.contributor.author	Wang, Da Hui	en_US
dc.date.accessioned	2014-12-12T02:12:48Z	-
dc.date.available	2014-12-12T02:12:48Z	-
dc.date.issued	1993	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT822430015	en_US
dc.identifier.uri	http://hdl.handle.net/11536/58528	-
dc.language.iso	en_US	en_US
dc.title	次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測	zh_TW
dc.title	Physics, simulation and characterization of hot carrier injection induced reliability issues in submicron MOSFET's	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文