以大傾鈄角度離子佈植汲極製程改進深次微米金氧半電晶體之熱載子可靠度之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	周志文	en_US
dc.contributor.author	Zhou, Zhi Wen	en_US
dc.contributor.author	張俊彥	en_US
dc.contributor.author	Zhang, Jun Yan	en_US
dc.date.accessioned	2014-12-12T02:12:48Z	-
dc.date.available	2014-12-12T02:12:48Z	-
dc.date.issued	1993	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT822430019	en_US
dc.identifier.uri	http://hdl.handle.net/11536/58532	-
dc.language.iso	en_US	en_US
dc.title	以大傾鈄角度離子佈植汲極製程改進深次微米金氧半電晶體之熱載子可靠度之研究	zh_TW
dc.title	An investigation of large-angle-tilt implanted drain process for improving hot carrier reliability	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文