| 標題: | 短通道薄膜金氧半場效電晶體的二維分析及完整的新解析模式 2-D analysis and complete new analytic models for short-channel thin film MOSFET's |
| 作者: | 郭俊彥 Guo, Jun Yan 吳慶源 Wu, Qing Yuan 電子研究所 |
| 公開日期: | 1993 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT822430020 http://hdl.handle.net/11536/58533 |
| 顯示於類別： | 畢業論文 |
- A NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE / LIN, PS;WU, CY
- A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS / GUO, JY;WU, CY
- 一種製造於部分空乏型矽在絕緣層上之短通道金氧半場效電晶體的二維解析模式 / 許勝福;HSU,SHENG-FU;吳慶源;Ching-Yuan wu
- A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING / LIN, PS;WU, CY
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