| Title: | 互補式金氧半可靠性的嶄新觀察:漏電流及鎖定 New observations in CMOS reliability |
| Authors: | 趙崑章 Zhao, Kun Zhang 陳明哲 Chen, Ming Zhe 電子研究所 |
| Issue Date: | 1993 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT822430023 http://hdl.handle.net/11536/58537 |
| Appears in Collections: | Thesis |
- New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond / Chung, Steve S.;Huang, D. C.;Tsai, Y. J.;Lai, C. S.;Tsai, C. H.
- The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology / Chung, SS;Yeh, CH;Feng, SJ;Lai, CS;Yang, JJ
- Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes / Chen, Jung-Sheng;Ker, Ming-Dou
- The Demonstration of Low-cost and Logic Process Fully-Compatible OTP Memory on Advanced HKMG CMOS with a Newly found Dielectric Fuse Breakdown / Hsieh, E. R.;Huang, Z. H.;Chung, Steve S.;Ke, J. C.;Yang, C. W.
Loading...