利用超高真空化學氣相沉積術成長多晶矽與多晶矽鍺薄膜及其材料特性與元件應用之研究

標題:	利用超高真空化學氣相沉積術成長多晶矽與多晶矽鍺薄膜及其材料特性與元件應用之研究 Characterization and device applications of polycrystalline si and Si1-xGex films grown by ultra-high vacuum chemical vapor deposition
作者:	林鴻志 Lin, Hong Zhi 電子研究所
公開日期:	1993
URI:	http://140.113.39.130/cdrfb3/record/nctu/#NT822430030 http://hdl.handle.net/11536/58544
Appears in Collections:	Thesis