| 標題: | 以低壓有機金屬化學氣相磊晶法成長超高碳摻雜砷化鎵之特性研究 Characterization of heavily carbon-doped GaAs grown by LP-MOCVD |
| 作者: | 陳宏達 Chen, Hong Da 張俊彥 馮明憲 Zhang, Jun Yan Feng, Ming Xian 電子研究所 |
| 公開日期: | 1993 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT822430034 http://hdl.handle.net/11536/58549 |
| Appears in Collections: | Thesis |
- SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION / WANG, CJ;WU, JW;CHAN, SH;CHANG, CY;SZE, SM
- 以低壓有機金屬化學汽相沉積法成長磷化銦鎵與砷化鎵異質結構之研究 / 顧成芳;Gu Cheng-Fang;張 翼;Edward Yi Chang
- 2-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURES / LIN, W;HSU, WC;WU, TS;CHANG, SZ;WANG, C
- THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION / CHANG, CY;LIN, W;HSU, WC;WU, TS;CHANG, SZ
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