Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Feng, Li-Wei | en_US |
dc.contributor.author | Chang, Chun-Yen | en_US |
dc.contributor.author | Chang, Yao-Feng | en_US |
dc.contributor.author | Chen, Wei-Ren | en_US |
dc.contributor.author | Wang, Shin-Yuan | en_US |
dc.contributor.author | Chiang, Pei-Wei | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.date.accessioned | 2014-12-08T15:07:25Z | - |
dc.date.available | 2014-12-08T15:07:25Z | - |
dc.date.issued | 2010-02-01 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3294632 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5854 | - |
dc.description.abstract | Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO(2)/Fe structure due to the presence of a thin FeO(x) transition layer at the SiO(2)/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO(2)/Fe(0.73)Pt(0.27) structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeO(x) layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeO(x) phase transition characteristics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3294632 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 96 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
Appears in Collections: | Articles |