Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liang, Ching-Piao | en_US |
dc.contributor.author | Rao, Pei-Zong | en_US |
dc.contributor.author | Huang, Tian-Jian | en_US |
dc.contributor.author | Chung, Shyh-Jong | en_US |
dc.date.accessioned | 2014-12-08T15:07:27Z | - |
dc.date.available | 2014-12-08T15:07:27Z | - |
dc.date.issued | 2010-02-01 | en_US |
dc.identifier.issn | 0018-9480 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TMTT.2009.2037855 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5869 | - |
dc.description.abstract | Two 3-5-GHz low-power ultra-wideband (UWB) low-noise amplifiers (LNAs) with out-band rejection function using 0.18-mu m CMOS technology are presented. Due to the Federal Communications Commission's stringent power-emission limitation at the transmitter, the received signal power in the UWB system is smaller than those of the close narrowband interferers such as the IEEE 802.11 a/b/g wireless local area network, and the 1.8-GHz digital cellular service/global system for mobile communications. Therefore, we proposed a wideband input network with out-band rejection capability to suppress the out-band properties for our first UWB LNA. Moreover, a feedback structure and dual-band notch filter with low-power active inductors will further attenuate the out-band interferers without deteriorating the input matching bandwidth in the second UWB LNA. The 55/48/45 dB maximum rejections at 1.8/2.4/5.2 GHz, a power gain of 15 dB, and 3.5-dB minimum noise figure can be measured while consuming a dc power of only 5 mW. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Complementary metal-oxide semiconductor (CMOS) | en_US |
dc.subject | low-noise amplifier (LNA) | en_US |
dc.subject | out-band rejection | en_US |
dc.subject | ultra-wideband (UWB) | en_US |
dc.title | Analysis and Design of Two Low-Power Ultra-Wideband CMOS Low-Noise Amplifiers With Out-Band Rejection | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TMTT.2009.2037855 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | en_US |
dc.citation.volume | 58 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 277 | en_US |
dc.citation.epage | 286 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000274390900004 | - |
dc.citation.woscount | 9 | - |
Appears in Collections: | Articles |
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