Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Chia-Ta | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Kuo, Chien-I | en_US |
dc.contributor.author | Huang, Jui-Chien | en_US |
dc.contributor.author | Lu, Chung-Yu | en_US |
dc.contributor.author | Miyamoto, Yasuyuki | en_US |
dc.date.accessioned | 2014-12-08T15:07:28Z | - |
dc.date.available | 2014-12-08T15:07:28Z | - |
dc.date.issued | 2010-02-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2037167 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5894 | - |
dc.description.abstract | We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Omega . mm and a low gate leakage current of 0.9 mu A/mm when biased at V(GS) = -3 V and V(DS) = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlGaN/GaN | en_US |
dc.subject | high-electron mobility transistor (HEMT) | en_US |
dc.subject | noise figure | en_US |
dc.subject | recessed gate | en_US |
dc.title | 30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2009.2037167 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 31 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 105 | en_US |
dc.citation.epage | 107 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000274018000005 | - |
dc.citation.woscount | 7 | - |
Appears in Collections: | Articles |
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