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dc.contributor.authorChien, W. C.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorLai, E. K.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorLin, P.en_US
dc.contributor.authorHorng, S. F.en_US
dc.contributor.authorGong, J.en_US
dc.contributor.authorChou, T. H.en_US
dc.contributor.authorLin, H. M.en_US
dc.contributor.authorChang, M. N.en_US
dc.contributor.authorShih, Y. H.en_US
dc.contributor.authorHsieh, K. Y.en_US
dc.contributor.authorLiu, R.en_US
dc.contributor.authorLu, Chih-Yuanen_US
dc.date.accessioned2014-12-08T15:07:29Z-
dc.date.available2014-12-08T15:07:29Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2037593en_US
dc.identifier.urihttp://hdl.handle.net/11536/5895-
dc.description.abstractThe microstructure and electrical properties of the WO(X)-based resistive random access memory are investigated in this letter. The WO(X) layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WO(X) layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.en_US
dc.language.isoen_USen_US
dc.titleUnipolar Switching Behaviors of RTO WO(X) RRAMen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2037593en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue2en_US
dc.citation.spage126en_US
dc.citation.epage128en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
Appears in Collections:Articles