標題: Unipolar Switching Behaviors of RTO WO(X) RRAM
作者: Chien, W. C.
Chen, Y. C.
Lai, E. K.
Yao, Y. D.
Lin, P.
Horng, S. F.
Gong, J.
Chou, T. H.
Lin, H. M.
Chang, M. N.
Shih, Y. H.
Hsieh, K. Y.
Liu, R.
Lu, Chih-Yuan
材料科學與工程學系
奈米中心
Department of Materials Science and Engineering
Nano Facility Center
公開日期: 1-Feb-2010
摘要: The microstructure and electrical properties of the WO(X)-based resistive random access memory are investigated in this letter. The WO(X) layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WO(X) layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.
URI: http://dx.doi.org/10.1109/LED.2009.2037593
http://hdl.handle.net/11536/5895
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2037593
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 2
起始頁: 126
結束頁: 128
Appears in Collections:Articles