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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorKao, Shih-Chinen_US
dc.contributor.authorOuyang, Shiang-Rueien_US
dc.date.accessioned2014-12-08T15:07:29Z-
dc.date.available2014-12-08T15:07:29Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2037591en_US
dc.identifier.urihttp://hdl.handle.net/11536/5896-
dc.description.abstractIn this letter, the channel length effect, combined with the photoelectric field effect of organic phototransistors, has been investigated for the first time. Reducing the channel length and applying a positive gate bias during illumination enhance electron trapping effectively and hence improve the photoresponsivity of a pentacene-based phototransistor. The sensing dynamic range and the photosensitivity to very weak light (in the range of microwatts per square centimeter) are also discussed through the interaction between deep trapped states, interface energy-band bending, and photoexcited electrons.en_US
dc.language.isoen_USen_US
dc.subjectChannel lengthen_US
dc.subjectpentaceneen_US
dc.subjectphotoresponsivityen_US
dc.subjectphototransistoren_US
dc.subjectthin-film transistor (TFT)en_US
dc.titlePentacene-Based Organic Phototransistor With High Sensitivity to Weak Light and Wide Dynamic Rangeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2037591en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue2en_US
dc.citation.spage135en_US
dc.citation.epage137en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274018000015-
dc.citation.woscount10-
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