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dc.contributor.authorPeng, Peng-Chunen_US
dc.contributor.authorLan, Ruei-Longen_US
dc.contributor.authorWu, Fang-Mingen_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorLin, Chun-Tingen_US
dc.contributor.authorChen, Jason (Jyehong)en_US
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorChi, Sienen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChi, Jim Y.en_US
dc.date.accessioned2014-12-08T15:07:29Z-
dc.date.available2014-12-08T15:07:29Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2037332en_US
dc.identifier.urihttp://hdl.handle.net/11536/5900-
dc.description.abstractThis investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.en_US
dc.language.isoen_USen_US
dc.subjectQuantum dots (QDs)en_US
dc.subjectvertical-cavity surface-emitting lasers (VCSELs)en_US
dc.titlePolarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2009.2037332en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue3en_US
dc.citation.spage179en_US
dc.citation.epage181en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000273708600004-
dc.citation.woscount3-
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