條狀質子佈植雷射的製作與特性

Abstract

本論文中，我們提出對於質子佈植條狀半導體雷射的製作與特性之研究。 利用分子束磊晶所成長之以砷化鋁鎵量子井為主動層的晶片製作雷射。藉 由控制光罩形狀、佈植的劑量及能量以期能得到低臨界電流和較小的遠場 角度比。在佈植時光罩中央線寬分別定為 6、8和10um；佈植的劑量為5 ×10E14於每平方公分，而能量分別控制在120、160和200 KeV。由此我們 可以得到最佳結果為以150 KeV 能量佈植光罩中央線寬為8um之雷射元件 ，其可以具有低於40 mA和約2.5左右之遠場角度比。 In this thesis, we present our studies on the fabrication and characteristics of proton implanted stripe semiconductor lasers. We fabricated the GaAs\AlGaAs quantum well lasers which were grown by MBE. By controlling the mask shape, implant dosage and energy in order to get low threshold current and small aspect ratio of far field angles. The implant dosage is controlled in 5×10E14 per square centimeter ; energy is separately controlled in 120, 160, 200 KeV, and the central stripe width 10 um. Hence, we can find the optimum is the device with 8um stripe width, implanted by 150 KeV, which could have threshold current lower than 40 mA, and ratio of far field about 2.5.