單晶微波積體電路之元件傳輸物理、元件模式化與一2 GHz降頻器之設計

Abstract

於本論文中，我們探討了三個相關於單晶微波積體電路之重要研究題目： 低維電子之傳輸特性研究、單晶微波積體電路元件之模式化、單晶微波積 體電路晶片之研發。低維電子傳輸特性之研究結果顯示電子移動率與量子 元件之幾何結構具有密切的關聯性，於量子結構內最高電子移動率發生於 第一與第二次能帶之能階差為兩倍極化光聲子能量時。在元件模式化方面 ，我們則針對指叉狀砷化鎵金屬半導體場效電晶體，發展了一包含考慮閘 極通道之間熱耦合溫度效應之新電熱模式。在晶片研發上，我們研發了 一 950-2050 MHz 單晶微波積體電路降頻器，以及一 dc - 6 GHz 單晶微 波積體電路切換開關。元件之量測特性與晶片之測試性能均用於驗証元件 模式、設計方法、以及線路架構之有效性。 In the thesis, three important research topics concerning MMIC technologies have been accomplished, which are LDEG transport physics, MMIC device modeling, and MMIC chip development. The result on the LDEG transport studies shows that the low- dimensional electron mobility varies significantly with a quantum well/wire geometry. The highest low-dimensional electron mobility is achieved in a quantum well/wire structure where the energy separation between the first subband and the second subband is about two times the polar optical phonon energy. In device modeling, an electrical- thermal model for interdigitated GaAs MESFET's to account for the temperature effects including thermal coupling among gate fingers has been developed. On the MMIC chip development, a 950-2050 MHz GaAs MMIC downconverter and a dc-6 GHz GaAs MESFET MMIC switch have been designed characterized for microwave applications. The device characteristics and the MMIC chip performance have been measured to verify our modeling approaches, design methodologies, and circuit topologies.