標題: 半導體量子微結構電子能態之研究
The Study of Electronic States in Semiconductor Quantum Microstructures
作者: 崔一陽
Tsuei, Young
楊賜麟
Su-Lin Yang
電子物理系所
關鍵字: 半導體;電子能態;激子;束縛能;量子井;量子線;semiconductor;confinement energy;exciton;binding energy;quantum well;quantum wire
公開日期: 1995
摘要: 本文主要研究半導體量子侷限結構中電子的行徑, 藉由有限差分束傳輸法以及分數維度模型,我們分別 計算量子線以及擴散型量子井中電子與電洞的侷限能態 及激子束縛能.此外,我們亦模擬計算量子井,量子位障, 共振穿隧結構及超晶格在斜向外加磁場下,電子能態隨 迴轉中心位置及外加磁場角度的變化情形. In this thesis, we study the electron behaviors in semiconductor quantum confined structure, By making use finite difference beam propagation method and fractional dimension model, we calculate the electron and hole confinement energies and exciton binding energies of quantum wires and interdiffusion quantum wells, respectively. Besides, we calculate the variation of electron energy states with cyclotron orbit centers under tilted magnetic fields.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT840429014
http://hdl.handle.net/11536/60575
顯示於類別:畢業論文